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    Diodes Incorporated ZXMN2A01E6TC

    MOSFET N-CH 20V 2.5A SOT23-6
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    ZXMN2A01E6TC Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXMN2A01E6TC Zetex Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CHAN 20V SOT23-6 Original PDF
    ZXMN2A01E6TC Zetex Semiconductors 20V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF

    ZXMN2A01E6TC Datasheets Context Search

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    sot23 2A1 device Marking

    Abstract: ZXMN2A01E6 ZXMN2A01E6TA ZXMN2A01E6TC zxm* sot23-6
    Text: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.12⍀ D=3.03A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


    Original     		PDF ZXMN2A01E6 OT23-6 OT23-6 ZXMN2A01E6TA ZXMN2A01E6TC sot23 2A1 device Marking ZXMN2A01E6 ZXMN2A01E6TA ZXMN2A01E6TC zxm* sot23-6

    sot23-6 marking 131

    Abstract: sot23 2A1 device Marking
    Text: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.12⍀ D=3.03A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


    Original     		PDF ZXMN2A01E6 OT23-6 OT23-6 ZXMN2A01E6TA ZXMN2A01E6TC sot23-6 marking 131 sot23 2A1 device Marking

    marking QG SOT23-6

    Abstract: sot23 6 device Marking sot23 2A1 device Marking DIODES marking 2a1 MARKING 20 SOT23-6 MOSFET N SOT23-6 MOSFET sot23-6 MOSFET sot23-6 QG SOT23-6 ZXMN2A01E6
    Text: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ID = 3.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN2A01E6 OT23-6 OT23-6 ZXMN2A01E6TA ZXMN2A01E6TC marking QG SOT23-6 sot23 6 device Marking sot23 2A1 device Marking DIODES marking 2a1 MARKING 20 SOT23-6 MOSFET N SOT23-6 MOSFET sot23-6 MOSFET sot23-6 QG SOT23-6 ZXMN2A01E6

    sot23 2A1 device Marking

    Abstract: ZXMN2A01E6 ZXMN2A01E6TA ZXMN2A01E6TC MARKING 303 SOT23-6
    Text: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ID = 3.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes


    Original     		PDF ZXMN2A01E6 OT23-6 OT23-6 ZXMN2A01E6TA ZXMN2A01E6TC 13ephone: sot23 2A1 device Marking ZXMN2A01E6 ZXMN2A01E6TA ZXMN2A01E6TC MARKING 303 SOT23-6

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 20V; RDS(ON)= 0.12 ID = 3.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN2A01E6 OT23-6 OT23-6 ZXMN2A01E6TA ZXMN2A01E6TC