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    Diodes Incorporated ZXMN2A03E6TC

    MOSFET N-CH 20V 3.7A SOT23-6
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    ZXMN2A03E6TC Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXMN2A03E6TC Zetex Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CHAN 20V SOT23-6 Original PDF
    ZXMN2A03E6TC Zetex Semiconductors 20V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF

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    ZXMN2A03E6TA

    Abstract: ZXMN2A03E6TC ZXMN2A03E6
    Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.055⍀ D=4.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,


    Original     		PDF ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC ZXMN2A03E6TA ZXMN2A03E6TC ZXMN2A03E6

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.055 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.55 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.55 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 20V; RDS(ON)= 0.55 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC

    ZXMN2A03E6

    Abstract: ZXMN2A03E6TA ZXMN2A03E6TC
    Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.055 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC ZXMN2A03E6 ZXMN2A03E6TA ZXMN2A03E6TC

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.055⍀ D=4.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


    Original     		PDF ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC100