DSA00374385.pdf by Filtronic

Partial File Text LP6836 MEDIUM POWER PHEMT · DRAIN BOND PAD FEATURES 25 dBm Output Power at 1-dB Compression at 18 GHz 9.5 dB Power Gain at 18 GHz 55% Power-Added Efficiency SOURCE BOND PAD (2x
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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high power transistor s-parameters LP6836 MIL-HDBK-263 MIL-STD-1686 pHEMT transistor LP6836

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