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DSA00769936.pdf
by TriQuint Semiconductor
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TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features · · · · · · · Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 2
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GaAs S2p
hemt .s2p
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