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    DSAUD0073394.pdf by ON Semiconductor

    • MBR1100 Preferred Device Axial Lead Rectifier These rectifiers employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial c
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    MBR1100 MBR1100G MBR1100RL MBR1100RLG
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