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Partial File Text NPN EPITAXIAL MJE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 b= -1 -5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS · C om plem ent to M J
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JE801 transistor H 802 y 803

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