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DSA00768590.pdf
by TriQuint Semiconductor
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TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features · · · · · · · Frequency Range: DC - 18 GHz > 41 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq =
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GaN 100 watt