DSA00768523.pdf by PEAK Devices

Partial File Text AGR19125E 125 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect tr
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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