DSAASSA0004583.pdf by Toshiba

Partial File Text TC58NYG1S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Elect
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock
Powered by Findchips

DSAASSA0004583.pdf preview

Download Datasheet

User Tagged Keywords

TC58NYG1 tc58nyg1s3ebai5