DSA00766812.pdf
- Toshiba
- MICROWAVE POWER GaN HEMT MICROWAVE SEMICONDUCTOR TGI1314-25L TECHNICAL DATA FEATURES HIGH POWER Pout=44.0dBm at Pin=39.0dBm HIGH GAIN GL=8.0dB at 13.75GHz to 14.5GHz TYPICAL APPLICATION Ku B
- Original
-
Price & Stock Powered by
Findchips
