DSA00763790.pdf by Toshiba

Partial File Text 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3710A High-Power Switching Applications Unit: mm · · · Low collector saturation voltage: VCE (sat) = 0.4 V (max) High-spee
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete
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TTA1452B

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