DSA00763707.pdf
by Toshiba
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CUS10F30
Schottky Barrier Diode Silicon Epitaxial
CUS10F30
1. Applications
ยท High-Speed Switching
2. Features
(1) (2) Low forward voltage: VF(3) = 0.43 V (typ.) General-purpose USC package,
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Original
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Unknown
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Unknown
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Unknown
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