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    DSA00763589.pdf

    • Toshiba
    • MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5359-4UL TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 5.3GHz to 5.9GHz HIGH GAIN G1dB=10.5dB at 5.3GHz to 5.9GHz BROAD BAND INTERNAL
    • Original
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