DSAH00416423.pdf by ON Semiconductor

Partial File Text NGB8206N Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for us
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b8206n ignition IGBT NGB8206