DASF008309.pdf by Toshiba

Partial File Text 2SC5199 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5199 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 160 V (min) · Complementary to 2SA1942
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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2-21F1A 2SA1942 2SC5199

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