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    DSA00760356.pdf

    • Toshiba
    • MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM7179-6UL TECHNICAL DATA FEATURES n HIGH POWER P1dB=38.5dBm at 7.1GHz to 7.9GHz n HIGH GAIN G1dB=9.0dB at 7.1GHz to 7.9GHz n BROAD BAND INTERN
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