We use Cookies to give you best experience on our website.
By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.
GT25Q102
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT25Q102
High Power Switching Applications
Unit: mm · · · · Third-generation IGBT Enhancement mode type High speed: tf =