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    DSAH00415452.pdf

    • ON Semiconductor
    • 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art
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    DSAH00415452.pdf preview Download Datasheet

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