DSA00758060.pdf by Toshiba

Partial File Text GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5G103 STROBE FLASH APPLICATIONS ! 3rd Generation ! High Input Impedance ! Low Saturation Voltage : VCE (sat) = 8 V (Max
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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