DSA0087850.pdf by Hitachi Semiconductor

Partial File Text HE8812SG GaAlAs Infrared Emitting Diode ADE-208-1000 (Z) 1st Edition Dec. 2000 Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is sui
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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