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    DSA00752419.pdf

    • Toshiba
    • MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT P1dB=33.5dBm at 10.7GHz to 11.7GHz n HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz TIM1011-2L PRELIMINARY
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