DSAEDA000123610.pdf by IXYS

Partial File Text Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 32A VCE(sat) â¤ 3.2V IXBH32N300 IXBT32N300 TO-247 (IXBH)
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32N30