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    DSAEDA000123606.pdf by IXYS

    • High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 14A VCE(sat) ≤ 3.2V IXBF20N300 (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test
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