DSA00501171.pdf
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Toshiba
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HN1B26FS
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1B26FS
General-Purpose Amplifier Applications
Unit: mm
1.0±0.05
0.8±0.05
0.35 0.35
: VCEO = 50 V, IC = 100 mA (ma
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Original
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