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DSAASSA00011226.pdf
by International Rectifier
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IRFH8321PbF V DS V gs max 30 ± 20 4.9 6.8 19.4 25 V V m nC A HEXFET® Power MOSFET RDS(on) max (@V GS = 10V) (@V GS = 4.5V) Qg typ. ID (@Tc(Bottom) = 25°C) i PQFN 5X6 mm App
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IRFH8321