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    DSAEDA000123376.pdf

    • IXYS
    • High-Gain IGBTs w/Diode VCES = 600V IC110 = 50A VCE(sat) ≤ 1.8V IXGH50N60B4D1 IXGQ50N60B4D1 Low-Vsat PT Trench IGBTs TO-247 (IXGH) G Symbol Test Conditions VCES VCGR
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