DSAEDA000123285.pdf by IXYS

Partial File Text Preliminary Technical Information High-Gain IGBT w/ Diode VCES = 600V IC110 = 21A VCE(sat) â¤ 2.50V IXGJ50N60C4D1 (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM
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RoHS Yes
Pb Free Unknown
Lifecycle Obsolete
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