The Datasheet Archive
Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
Search
DSA00743521.pdf
Manufacturer
Toshiba
Partial File Text
TOSHIBA MICROWAVE POWER GaAs FET Power GaAs FETs (Packaged) Features · High power - P1dB = 33.5 dBm at f = 8 GHz · High gain - G1dB = 5.5 dB at f = 8 GHz · Suitable for C-Band amplifier · Ion implan
Datasheet Type
Original
DSA00743521.pdf preview
Download Datasheet
Price & Stock Powered by
Findchips