DSAUTAZ0018327.pdf by Fairchild Semiconductor

Partial File Text FDD10N20LZ N-Channel UniFETTM MOSFET March 2013 FDD10N20LZ N-Channel UniFETTM MOSFET 200 V, 7.6 A, 360 m Features · RDS(on) = 300 m(Typ.) @ VGS = 10 V, ID = 3.8 A · Low Gate Charge (Typ.12 nC
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