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    DSA2IH0057626.pdf

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    • 4AK21 Silicon N-Channel Power MOS FET Array HITACHI Application High speed power switching Features · Low on-resistance RDS(on)< 0.09 Q, Vo, = 10 V, ID = 4 A R ds(oii) --0.12 £2, \ GS = 4 V,
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