DSA2IH0057625.pdf by Not Available

Partial File Text 4AK20 Silicon N-Channel Power MOS FET Array HITACHI Application High speed power switching Features · Low on-resistance RDs(oni - 0-25 £2 , VGS = 10 V ,I D = 2.5 A RDS«,nl< 0 .3 5 Q , VGS =
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