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    DSAUD0066923.pdf

    • Toshiba
    • MICROWAVE POWER GaAs FET TIM1011-4L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz n HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz n BROA
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