DSAQ00343507.pdf by ON Semiconductor

Partial File Text NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protect
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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GB8206 NGB8206A NGB8206NG

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