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    DSAQ00342693.pdf by ON Semiconductor

    • MBRS120T3G, SBRS8120T3G Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art g
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    MBRS120T3G SBRS8120T3G
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