DSAUD0066143.pdf by Eudyna Devices

Partial File Text FSU02LG General Purpose GaAs FET FEATURES · High Output Power: P1dB = 23.0dBm (Typ.)@2GHz · High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz · Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz · Low Bias
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DC bias of gaas FET Eudyna Devices FSU02LG FUJITSU RF 053