DSA00153674.pdf by Cree

Partial File Text CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree's CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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CGHV1J006D cree gate resistor G40V4 hemt .s2p high power transistor s-parameters

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