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DSA00356774.pdf
by International Rectifier
Partial File Text
PD - 95645 INSULATED GATE BIPOLAR TRANSISTOR Features · Low VCE (on) Non Punch Through IGBT Technology. · 10µs Short Circuit Capability. · Square RBSOA. · Positive VCE (on) Temperature Coefficien
Datasheet Type
Original
RoHS
No
Pb Free
Unknown
Lifecycle
Transferred
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