DSA00153651.pdf by Cree

Partial File Text CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree's CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency,
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock
Powered by Findchips

DSA00153651.pdf preview

Download Datasheet

User Tagged Keywords