DSA00153632.pdf by Cree

Partial File Text CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree's CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain
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2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC CGH25120 CGH25120F-TB RF Transistor s-parameter