DSA00152936.pdf by Cree

Partial File Text CGH60015D 15 W, 6.0 GHz, GaN HEMT Die Cree's CGH60015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, inc
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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