DSA00152927.pdf by Cree

Partial File Text CGH40120F 120 W, RF Power GaN HEMT Cree's CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general pu
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock
Powered by Findchips

DSA00152927.pdf preview

Download Datasheet

User Tagged Keywords

CGH4012 CGH40120F CGH40120F-TB ro4003