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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET High Power GaAs FETs (L, S-Band) Features · High power TPM2626-14 - P idB = 42.0 · High gain dBm at 2.6 GHz - G idB = 12.0 dB at 2.6 GHz · Partially m
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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