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DSAUD0064464.pdf
Manufacturer
Fujitsu
Partial File Text
FHR02X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.0dB (Typ.)@f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Rel
Datasheet Type
Original
ECAD Model
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FHR02X
FHX02X
GaAs FET HEMT Chips
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