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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET High Power GaAs FETs (L, S-Band) Features · High power " P-ldB = 4 4 .5 d B m a t 2 3 G H z TPM2323-30 · High gain - G i dB = 11.5 dB at 2.3 G H z · Partially
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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