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DSAIH00026758.pdf
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ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES · VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz · HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz · Lg = 0.25 jam, W g = 200 (irn · LOW COST METAL/CERAM
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