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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET TIM6472-30SL Features · Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 3 4 .5 d B m , Single Carrier Level · High po w e r - PidB = 45 dB m at 6.4 G
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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