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    • TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (C-Band) Features · High power - P idB = 39.5 dBm at 5.9 GHz to 6.4 GHz · High gain - G 1dB = 8.0 dB at 5.9 GHz to 6.4 GHz · Broa
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