DSA2IH00206611.pdf by Not Available

Partial File Text TOSHIBA MICROWAVE POWER GaAs FET PRELIMINARY Features · Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 3 5.0 dB m · High po w e r - P idB = 4 5 .5 d B m at 5.9 to 6.4 G H z · High effi
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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