DSA2IH00206541.pdf

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Partial File Text TOSHIBA MICROW AVE POWER GaAs FET internally Matched Power G aAs FETs (X, Ku-Band) Features * High power - P1dB = 39.5 dBm at 11.7 GHz to 12.7 GHz * High gain G1dB = 5.0 dB at 11.7 GHz to 12.7 GHz
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