DSA00364441.pdf by Hitachi Semiconductor

Partial File Text 2SK3391 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-847 (Z) 1st. Edition Aug. 2001 Features · High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, add= 58 % min.
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
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